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 Chip Schottky Barrier Diodes
FM520-T THRU FM5100-T
Silicon epitaxial planer type
Formosa MS
SMC-T
0.276(7.0) 0.260(6.6) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6)
0.189(4.8) 0.173(4.4)
0.244(6.2) 0.228(5.8)
0.087(2.2) 0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE DO-214AB C Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 5.0 150 0.5 50 Rq JA CJ TSTG -55 15 380 +150
o
UNIT A A mA mA C/w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SS52 SS53 SS54 SS55 SS56 SS58 S510
V RRM
*1
V RMS
*2
VR
*3
VF
*4
Operating temperature (o C)
(V) FM520-T FM530-T FM540-T FM550-T FM560-T FM580-T FM5100-T 20 30 40 50 60 80 100
(V) 14 21 28 35 42 56 70
(V) 20 30 40 50 60 80 100
(V)
0.55
-55 to +125
*1 Repetitive peak reverse voltage
0.70 -55 to +150 0.85
*2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM520-T THRU FM5100-T)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
6.0 5.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0-T ~F M5 40 0-T -T ~F FM M5 58 60 0-T T~ FM 51 00 -T
FM 55
4.0
-T 00 51 FM T~ 055 T FM 054 FM T~ 052 FM
3.0 2.0 1.0 0 0 20 40 60
10 3.0 1.0
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FM 52
Tj=25 C Pulse Width 300us 1% Duty Cycle
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
0.1
PEAK FORWARD SURGE CURRENT,(A)
120
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
90
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
FORWARD VOLT AGE,(V)
60
30
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
1400 1200 1000 800 600 400 200 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
Tj=75 C
1.0
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)


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